Electronic properties of pseudomorphic (on GaAs) and (on InP) Modfet structures
نویسندگان
چکیده
منابع مشابه
The tailoring of impact ionization phenomenon using pseudomorphic structures - applications to 1 InGaAIAs on GaAs and InP I substrates
In this paper the potential of utilizing strain for suppressing impact ionization is evaluated. It is found that if compressive strain is introduced without altering the bandgap (e.g. by using properly tailored InGaAlAs alloys) the threshold energy for electron impact ionization is significantlv increased for both GaAs-based and InP-based materials. Pseudomorphic devices such as n-type In,Ga, -...
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مطالعه حاضر تلاشی است برای بررسی تأثیرات به کارگیری فرهنگ لغات ، یکی از مهمترین ابزارهای یادگیری واژگان درفراگیری زبان خارجی، بر روی دانش لغوی. دراین تحقیق فرهنگ های الکترونیکی در قیاس با فرهنگ های چاپی مورد بررسی قرارگرفته اند که آیا این فرهنگ ها تاثیرقابل توجهی بر روی دوبعد کمی و کیفی دانش لغوی یعنی عمق و گستره لغات می گذارند. همچنین مشخص گردیده است که آیا تفاوت قابل ملاحظه ای میان عمق و گستر...
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ژورنال
عنوان ژورنال: Superlattices and Microstructures
سال: 1988
ISSN: 0749-6036
DOI: 10.1016/0749-6036(88)90207-8